Calibration Service

FATRI UTC

High precision calibration equipment

The 9155D accelerometer calibration workstation, including low frequency calibration shaker（0.1Hz~500Hz）,medium frequency calibration （10Hz~20kHz）,shock shaking table （20g~10000g）, can provide precise calibration service for piezoresistive accelerometer, capacitive accelerometer and piezoelectric accelerometer. The reference standard of each system calibrated based on ISO16063-11 standard and the laser system accredited by A2LA ensures the world-class calibration uncertainty. The system provides modular components that can offer solution for different needs.

Optical Ellipsometer

Range: Psi=0°-90°(vertical), Delta=0°-360°, no dead zone. Accuracy: Ψ≤45°±0.01°，Δ≤0°±0.01° （1.5eV-5eV）@ perpendicular incidence air(Psi = 45°; Delta = 0°), Repeatability: SiO2 thin film, 1δ≤±0.3Å or 0.03%(SiO2/Si test specimen), refractive index < 0.0002; Repeatability of refractive index: n±0.0002 （NIST 1000Å SiO2/Si）

AFM(Atomic Force Microscope)

XYZ tri-axis feedback loop scanner, XY axis ≥30um, Z axis≥3um; Noise xy-axis<0.1nm, Noise Z-axis<0.3 Å. Meet AFM mica atomic image examination. Tip feeding mode: Intelligent Automatic Feeding, with combination of Motor and piezoelectric auto-detection feeding mode, very high resolution test requirement can be achieved. Automatic Intelligent scan mode: User just need select range to be scanned, system will automatically adjust cantilever driver, “amplifier gain” and “scan speed” to achieve automatically image generation.
Quantitative nano-force test module: with image generation speed not changing and shape high resolution (<10nm) photographing, high resolution surface in situ modulus data, surface adhesive force, distortion, energy loss, etc., can be measured in synchronization way.
Scanning semiconductor ion doping microscope: Measure ion doping type (P type or N type) of the test specimen (semiconductor); identify carrier type (N type or P type) and relative distribution of doping concentration; detective limit low to <10e-18F; scan space resolution up to 10nm, carrier concentration photographing range from 1e15 to 1e20 carrier/cc; in Conductive Material Mode, with conductive tip, current can be measured when shape scanning and .photographing; variance of film thickness and electrical and other characteristic defective location can be identified by current value measured. Current amplifier resolution is about 2 pico-amp, full working scale from 10nA to 1mA.

Thermal field scanning electron microscope

Resolution: ≥1.6nm/1KV, non-decelerate mode, ≥0.8nm/15kV in secondary electron imaging mode. Sample tray can be tilted in low voltage mode. Amplification factor: 10X-1,000,000X, automatically adjusted depend on acceleration voltage and distance. Acceleration voltage: 0.02kV-30kV, acceleration voltage resolution≤10V, accelerate voltage stepless variable; Electron Gun: Schottky Thermal field electron gun; Electron Beam: ≥20nA, stability: within ±0.2@