Bulk silicon fabrication

Bulk silicon fabrication process includes de-processing (etching), adhesion processing (coating), modification processing (doping) and bonding processing (bonding).
Etching technology mainly includes dry etching and wet etching. It can also be divided into isotropic etch and anisotropic etch.
(1) Dry etching uses reactive gas or ion current for etching. Dry etching can etch many metals and non-metallic materials. Both isotropic etching and anisotropic etching are possible. It is a common equipment in integrated circuit or MEMS process. According to the etching principle, it can be divided into Plasma Etching (PE), Reaction Ion Etching (RIE) and Induction Couple plasma Etching (ICP). In plasma gas, isotropic plasma etching can be realized. Directional etching can be achieved by ion current etching.
(2) Wet etching is the etching of silicon wafers into etching liquids with fixed chemical composition and temperature. The isotropic etching of silicon has the same etching speed in all etching directions. For example, chemical polishing and so on. The common etching solution is HF-HNO3 etching system, which usually adds H2O or CH3COOH to HF and HNO3. Compared with H2O, CH3COOH can be diluted in a wider range to maintain the oxidation ability of HNO3, so the oxidation ability of etching solution is quite stable in the process. Anisotropic etching of silicon refers to different etching rates for different silicon crystal plane. For example, the etching rate ratio of {100}/{111} surface is 100:1. Based on this etching property, various microstructures can be fabricated on silicon substrates. Anisotropic etchants are generally divided into two categories, one is organic etchants, including EPW (ethylenediamine, phthalic acid and water) and diamine. The other is inorganic etchants, including alkaline etchants such as KOH, NaOH, LiOH, CsOH and NH4OH.
In the etching of silicon microstructures, not only the ideal geometry can be controlled by anisotropic etching technology, but also the etching depth can be controlled by self-stop technology. For example, anode self-stop etching, PN junction self-stop etching, heterostructure self-stop etching, heavy doping self-stop etching, electrodeless self-stop etching, photoelectric effect to achieve self-stop etching and so on.

MEMS for silicon surface

MEMS of surface is based on the "mechanical" (motion or sensing) part of MEMS, which is made on the surface of silicon crystal, such as polycrystalline silicon and silicon nitride, and then partially separated from the silicon part. Separation mainly depends on the Sacrifice Layer technology, that is, depositing a layer on the silicon substrate to be etched (sacrificial), (for example, SiO2 can be etched by HF), then depositing the film of the moving mechanism on the silicon substrate, and then making use of the lithography technology to create the mechanism pattern and channel of the membrane. When all is finished, sacrificial layer etching can be carried out and the micro-mechanism can be freely released.
MEMS of silicon surface includes film-depositing technology and film etching technology. Film-depositing process includes wet and dry methods. The wet process includes electroplating (LIGA), casting, rotating coating and anodizing. The LIGA process is a method of fabricating high aspect ratio structure by optical manufacturing technology. It uses X-ray radiation from synchrotron radiation source to irradiate a special PMMA photosensitive adhesive to obtain a high aspect ratio casting mould, and then obtains the desired metal structure by electroplating or electroless plating. Dry film depositing mainly includes CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition). Wet etching is the main method of thin film etching, so the appropriate etching solution should be chosen.

Bonding technology

In microfabrication process, it is sometimes necessary to bond two microfabricated substrates together to obtain complex structures and achieve more functions. The methods of bonding substrates include welding, fusion, pressing (solid phase bonding), bonding, anodic bonding, direct silicon bonding and diffusion bonding.

Testing Service

Full Mask NTO (New chip flow project)

1.To provide customers with comprehensive technical support to match the production process of FATRI UTC. 2. To ensure the completion of the entire production process according to customer requirements and product specifications

Chip Flow service

FATRI UTC provides customized MEMS production and processing plan for customers. MEMS solutions mainly focus on acceleration sensors, pressure sensors, micro-flow sensors and other applications. The main technology of the platform is as follows: MEMS platform: 1. CMOS / MEMS Integrated Solution 2. Silicon perforation / wafer level packaging 3. CMOS compatible technics 4. Complete IP protection

Packaging service

Because of the variety and function of MEMS products, the usage of MEMS design is very different, and the packaging form is very different also. But from the packaging structure, it can be roughly divided into the following three categories: Closed Package, Open Cavity Package and Open Eyed Package.
FATRI UTC provides special corresponding packaging services for its customers.
In addition to providing a micro-electro-mechanical system (MEMS) sensor technology platform, FATRI UTC can also build a single chip system (SoC), system-level packaging (SiP), wafer-level packaging (WLP) and other one-stop systems that integrate radio frequency, baseband, microprocessor, embedded flash memory and micro-electro-mechanical system sensors. This service helps shorten the product market cycle and optimizes product cost and structure form.

Test service

The FATRI UTC test facilities provide customers with chip quality tests that are fast and strict in quality control. Advanced test equipment can provide a full range of testing services for customers in 6 inch wafer. Chip testing services include: development of test projects and improvement of test problems / failure analysis and reliability testing of materials at high temperatures or pressures, etc.

Introduction of equipment

Copyright © 2011-2017 西人马(厦门)科技有限公司

闽ICP备15027573号-5 闽公网安备 35020302001091号